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Fundamentals of Carrier Transport(ISBN=9780521637244)书籍详细信息

  • ISBN:9780521637244
  • 作者:暂无作者
  • 出版社:暂无出版社
  • 出版时间:2009-07
  • 页数:440
  • 价格:225.50
  • 纸张:胶版纸
  • 装帧:平装
  • 开本:32开
  • 语言:未知
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  • TAG:暂无
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  • 更新时间:2025-01-18 23:14:24

内容简介:

  Fundamentals of Carrier Transport is an accessible

introduction to the behaviour of charged carriers in semiconductors

and semiconductor devices. It is written specifically for engineers

and students without an extensive background in quantum mechanics

and solid-state physics. This second edition contains many new and

updated sections, including a completely new chapter on transport

in ultrasmall devices. The author begins by covering a range of

essential physical principles. He then goes on to cover both low-

and high-field transport, scattering, transport in devices, and

transport in mesoscopic systems. The use of Monte Carlo simulation

methods is explained in detail. Many homework exercises are

provided and there are a variety of worked examples. The book will

be of great interest to graduate students of electrical engineering

and applied physics. It will also be invaluable to practising

engineers working on semiconductor device research and

development.


书籍目录:

1. The quantum foundation

2. Carrier scattering

3. The Boltzmann transport equation

4. Low-field transport

5. Balance equations

6. Monte Carlo simulation

7. High-field transport in bulk semiconductors

8. Carrier transport in devices

9. Transport in mesoscopic structures

Appendices


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书籍介绍

Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices. The author begins by covering a range of essential physical principles. He then goes on to cover both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. The use of Monte Carlo simulation methods is explained in detail. Many homework exercises are provided and there are a variety of worked examples. The book will be of great interest to graduate students of electrical engineering and applied physics. It will also be invaluable to practising engineers working on semiconductor device research and development.


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